RF SoS MOSFET Small Signal Model Extraction

Access to an accurate small-signal equivalent circuit model is an important step in circuit design. Reliable small signal extraction procedures readily useable by the designer are now required in millimetre-wave designs because many foundry process development kits do not support millimetre wave frequency design. The extraction procedures successful at lower frequencies for lumped circuit extraction are prone to failure at higher frequencies. In many cases these procedures output unphysical values. This paper proposes a multi-step extraction procedure that is shown to accurately extract model parameters at higher frequencies. The contributions of this paper are: 1) A high frequency multi step extraction small signal model extraction procedure. This multi step procedure permits accurate extraction of parameters at millimeters wave frequencies. 2) A small signal equivalent high frequency model for a Silicon on Saphire (SOS). Key-Words: Small signal equivalent circuit, 60GHz, de-embedding, extrinsic parameters, intrinsic parameters